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ROHM Power Management ICs and Power Devices

From:ControlEngineering.com | author:Mr.Chen | Time :2024-07-26 | 121 view: | Share:

In the face of environmental protection, energy and other social issues increasingly serious as well as technological innovation in the semiconductor electronics industry, ROHM (Rohm) focus on power, power and analogue technology, the introduction of power management chips, power devices and other heavyweight products to help industrial and automotive electronics R & D projects energy saving and high efficiency, significantly reducing the development cycle and risk. Click on the link at the end of the article or scan the QR code, you can view more related information, apply for free samples and so on~.

New Product Introduction : SerDes IC Series

SerDes IC Series:

- SerDes IC ‘BU18xMxx-C’ for image transmission: Optimising transmission rate according to resolution reduces power consumption by 27%; transmission rate optimisation function and spread spectrum function reduces EMI peaks by about 20dB; freeze detection function detects frozen state of images and improves reliability of the entire ADAS system reliability.

PMIC BD86852MUF-C:

- PMIC (Power Management IC) ‘BD86852MUF-C’ for cameras: Voltage setting and timing control can be performed with only a single IC, reducing the mounting area by approximately 41%; high conversion efficiency of 78.6% is achieved by suppressing heat generation, further reducing power consumption.

Hybrid IGBT single tube (RGWxx65C series):

- Built-in SiC diode with 67% lower loss than conventional IGBT products, providing better cost performance for popular automotive electronics and industrial equipment.

- AEC-Q101 compliant for use in harsh environments such as automotive and industrial equipment.

AC/DC Converter ICs (BM2P06xMF-Z Series):

- Built-in 730V withstand voltage MOSFET in a surface mount package supports up to 45W output power, helping to reduce factory installation costs.

- Adoption of control circuits incorporating ROHM's high-withstand voltage process technology and analogue design technology, resulting in standby power consumption that is more than 90% lower than that of conventional products.

- The number of power supply circuit components has been reduced by four, resulting in a lower risk of power semiconductor failures and greater power supply reliability.

AC/DC converter IC (BM2SC12xFP2-LBZ):

- Small surface-mount package with built-in 1700V SiC MOSFETs supporting up to 48W output power helps reduce factory installation costs.

- Overwhelming miniaturisation advantage by reducing the heat sink and up to 12 components to one

- Reduced development cycle and risk with built-in protection for improved reliability

- The gate driver circuit for SiC MOSFET drive is equipped to stimulate SiC MOSFET performance and achieve significant energy savings.

BD8758xYx-C operational amplifier:

- Excellent noise immunity performance in four international immunity evaluation tests reduces the burden of noise reduction design.

- Equipped with high-precision simulation models to prevent rework after actual prototyping.

Charge control IC (BD71631QWZ).

- Supports charging of new types of secondary batteries, such as all-solid-state and semi-solid-state batteries, that require low-voltage charging, and achieves a wide charging voltage range from 2.0V to 4.7V.

- The package size is ideal for thin secondary battery applications, with a 1.8mm x 2.4mm x 0.4mm thin package using ROHM's own packaging technology.

- Various charging characteristics (charging current, termination current, etc.) can be set for CCCV*2 charging, providing an ideal charging environment for wearable devices and small, thin IoT devices equipped with new secondary batteries.

MOSFETs (QH8Mx5/SH8Mx5 series):

- Achievement of the industry's ultra-low on-resistance, with 61% lower on-resistance in the Pch portion and 39% lower on-resistance in the Nch portion of the new process ±40V withstand voltage products

- Bipolar MOSFETs for device miniaturisation and shortened design cycles

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